Please I need your help with this questionsIts urgent and it

Please I need your help with this questions.Its urgent and its an electrical engineering question and thanks

(4) silicon with 10^14/cc B atoms at 900C is

(a)insulator

(b)n-type

(c)p-type

(d)intrinsic

(5)At higher temperatures (> 350K) the resistivity of silicon goes

(a)down, because more dopants are ionized

(b)up, because intrinsic concentration is increasing

(c)up, because the thermal velocity is increasing

(d)down, because the intrinsic concentration is increasing

Solution

insulator is right answer i think : iam guessing i gave explaination below based on research survey

a technique to use Ar ion-implantation

on the p -Si or poly-Si gate to suppress the boron pene-

tration in p pMOSFET is proposed and demonstrated. An

Ar-implantation of a dose over cm

is shown to be

able to sustain 900 C annealing for 30 min for the gate without

having the underlying gate oxide quality degraded. It is believed

to be due to gettering of fluorine, then consequently boron, by

the bubble-like defects created by the Ar implantation in the

p gate region to reduce the penetration. Excellent electrical

characteristics like dielectric breakdown , interface state density , and charge-to-breakdown on the gate oxide are obtained. The technique is compatible to the present CMOS process. The submicron pMOSFET fabricated by applying this technique exhibit better subthreshold characteristics and hot carrier immunity.