Using the BSS806N NMOS transistor the theoretical BSS806P PM

Using the BSS806N NMOS transistor, the theoretical BSS806P PMOS transistor (which is a perfect complement to the NMOS), R’s, CC’s, RFC’s, no more than 1 positive battery, and no more than one negative battery, design a circuit to do the following. Don’t break any parts. Achieve a gain of exactly (+/-) 10,000 V/V.

Input: VSIG is 100 uV pk. RSIG is a 10K resistor.                                   Output: RLOAD is a 50 Ohm resistor.

Solution

i max = 100/ 50

= 2 microamere

imin = gain * i max

= 0.2 A