Plasma etching is essential to the fineline pattern transfer

Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on chlorine flow (x, in SCCM) through a nozzle used in the etching mechanism and etch rate (y, in 100 A/min).

The summary statistics are

(a) Does the simple linear regression model specify a useful relationship between chlorine flow and etch rate? (Use = 0.05.)
State the appropriate null and alternative hypotheses.

1

State the conclusion in the problem context.

4

5 , 6

100 A/min

Interpret the interval.

7

_{Y · 3.0},

the true average etch rate when flow = 3.0. (Round your answers to three decimal places.)

8 , 9

100 A/min

(d) Calculate a 95% PI for a single future observation on etch rate to be made when flow = 3.0. (Round your answers to three decimal places.)

10 , 11

100 A/min

(e) Would the 95% CI and PI when flow = 2.5 be wider or narrower than the corresponding intervals of parts (c) and (d)? Answer without actually computing the intervals.

12

13

Solution

H₀: ₁ = 0
H_a: ₁ > 0

Fail to reject H₀. This model does specify a useful relationship between chlorine flow and etch rate.