Consider a MOS structure with a p polysilicon gate Ef EV SiO

Consider a MOS structure with a p^+ polysilicon gate (E_f= E_V), SiO_2 as the oxide [T_ox= 5 nm) and n-type silicon(N_d =1 times 10^18 cm^-3)as the body. What is the flat band voltage of this device? Sketch the band diagram for V_g = V_m. What is the threshold voltage of this device? Sketch the band diagram for V_g = V_t. Sketch the CV curve and numerically label V_fb, V_t and the maximum and minimum capacitance.

Solution

I didnt click on answer. It is showing that it cant skip and directly opened for answer and i dont have subjective knowledge to anser this.