1 Wright State University Nano Micro Fabrication Integrate

1

Wright

State

University

Nano

-

Micro Fabrication & Integrated Solid State Devices

Homework 4

–

Due in class on 2

5

July 201

6

A

nswer the question

s o

r

derive the requested result

(

show all work

)

.

Diffusion Questions

1)

A 5

-

hr boron diffusion is to be performed

at 1100

o

C.

(Hint: No calculation is needed

–

you have a figure in your notes/slides

to get you the solution)

a.

What thickness of silicon dioxide is required to mask this diffusion?

b.

Repeat part (a) for phosphorus

Solution

sorry no idea