QUESTION 1 15 points Save Answer Why cant we build a PNP tra

QUESTION 1 15 points Save Answer Why can\'t we build a PNP transistor from two discrete diodes? 1. A PNP transistor can 2.A PNP transistor has a 3.IEEE rules specify be assembled from narrow base that can that only diodes can wo discrete diodes if link the currents in the be used to make the correct side of 4. A PNP transistor can not be 5 A PNP transistor can assembled from two discrete diodes since the holes can not two discrete diodes diodes and only pass through the wire joining the diodes are as long as a to those in the base transistors can be the two diodes. An NPN is added in series collector junction. used to make transistor can be assembled with the \"collector, from two diodes since it uses electrons which are in the wire. QUESTION 2 15 points Save Answer Why is \"w\" less than \"WB in figure 10,9 of the text of a 1D pnp BJT? 1.WB is longer than 2.WB is the length of the n-type doped 3 WB and W are the same Charges flowing through the W which is why region and when xn(BE) and xn(BC are length, the book makes W depletion region drag the depletion figure 10.9 is drawn subtracted from WB we have W the length appear to be less than WB region with them and shorten the that of the undepleted base. for visual clarity. base of the transistor. QUESTION 3 15 points What is the advantage of making the emitter more heaviy doped than the base? 1. Heavy doping of the emitter minimizes the extent of the depletion region in the emitter. 2.A heavily doped emitter increases the current gain of the transistor in the active mode. 3. The base has to be less doped than the emitter in order to have the emitter moro heavily dopod than the base, 4. Heavy doping of the emitter lowers the mobility of carriers in the emitter and helps equalize the series resistance in each region, 10 points QUESTION 4 What is the advantage of making the base more heavily doped than the collector? 1. The collector has to have less doping than the base in order to have a more heavily doped base. 2. Heavy doping of the base allows it to dominate the collector. a ABghter doped collector minimizes the change in base width when the reverse bias on the collector base junction increases. 4. Light doping of the collector allows it to have a higher resistance.

Solution

Question 1) Ans -2 Best Answer

because narrow base links currents of base-emmitter junction to that of base collector junction

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