Consider a process that has an oxide thickness of tox 95nm

Consider a process that has an oxide thickness of t_ox = 9.5nm. The particle mobilities are given as mu_n = 540 and mu_p = 220 cm^2/V-sec. An nFET and pFET are made, both with W=12 mum, L = 0.35 mum. Both have gate voltages of VG = 3.3V, white the Threshold voltages are V_Tn = 0.65V and V_Tp = -0.74V. Find the values of R_n and R_p for the two transistors. Suppose that we want to keep the nFET the same size, but increase the width of the pFET to the point where R_p=0.8R_n, find the required width of pFET.

Solution

(a) Rn= 0.66 Rp= 0.15

(b) 0.8%