1 Why in lowleakage applications transistors with minimum L

1- Why in low-leakage applications transistors with minimum L should not be used? (2 points) 2- What is Drain Induced Barrier Lowering (DIBL)? (2 points)

Solution

1. Reduction in W/L ratio (Width to Length ratio) leads to low leakage current.

W/L ratio decreases when either W decrease or L increases. So L should be maximum.

that is L should not be minimum.

 1- Why in low-leakage applications transistors with minimum L should not be used? (2 points) 2- What is Drain Induced Barrier Lowering (DIBL)? (2 points) Solut

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