Homework SourseFor deeply scaled MOSFETs it is necessary to make very shall
Solution
MOSFET:
There are many ways to for forming the shallow p+/n junction .Low energy ion implantation of boron .
The boron is focused on forming the p+ S/D junction as the 100nm.
The boron diffusivity in silicon is more strongly enhanced in the presence of the silicon interstitials which accumulates during the ion implantation and the cause TED of the boron.
When the increment of the p+/n junction depth 200 to 500nm, the junction will be more deeply along with the TED .and its depend mostly upon annealing the strategy and its most independent of the boron energy at 0.5keV nd to 2keV range
Implant of BF2 has been used to from p+ S./D junction regions.The main advantage of the bf2 compared to the boron are a reduced effective boron energy and more significant amophization
And its reduced the region of the junction deep.
But the disadvantage of the from BF2 is implanted silicon is the regenerated of raher high density of 10power of 8 cm-2.
When very good shallow of boron implantation to the substrate that was an order to the threshold voltage.
When we consider the deeper boron implantation ,in order to remove or eliminate THE subsurface puch through out boron implantation peak should nbe the approximately at the source and drain of the junctionMOSFET:
There are many ways to for forming the shallow p+/n junction .Low energy ion implantation of boron .
The boron is focused on forming the p+ S/D junction as the 100nm.
The boron diffusivity in silicon is more strongly enhanced in the presence of the silicon interstitials which accumulates during the ion implantation and the cause TED of the boron.
When the increment of the p+/n junction depth 200 to 500nm, the junction will be more deeply along with the TED .and its depend mostly upon annealing the strategy and its most independent of the boron energy at 0.5keV nd to 2keV range
Implant of BF2 has been used to from p+ S./D junction regions.The main advantage of the bf2 compared to the boron are a reduced effective boron energy and more significant amophization
And its reduced the region of the junction deep.
But the disadvantage of the from BF2 is implanted silicon is the regenerated of raher high density of 10power of 8 cm-2.
When very good shallow of boron implantation to the substrate that was an order to the threshold voltage.
When we consider the deeper boron implantation ,in order to remove or eliminate THE subsurface puch through out boron implantation peak should nbe the approximately at the source and drain of the junctionMOSFET:
There are many ways to for forming the shallow p+/n junction .Low energy ion implantation of boron .
The boron is focused on forming the p+ S/D junction as the 100nm.
The boron diffusivity in silicon is more strongly enhanced in the presence of the silicon interstitials which accumulates during the ion implantation and the cause TED of the boron.
When the increment of the p+/n junction depth 200 to 500nm, the junction will be more deeply along with the TED .and its depend mostly upon annealing the strategy and its most independent of the boron energy at 0.5keV nd to 2keV range
Implant of BF2 has been used to from p+ S./D junction regions.The main advantage of the bf2 compared to the boron are a reduced effective boron energy and more significant amophization
And its reduced the region of the junction deep.
But the disadvantage of the from BF2 is implanted silicon is the regenerated of raher high density of 10power of 8 cm-2.
When very good shallow of boron implantation to the substrate that was an order to the threshold voltage.
When we consider the deeper boron implantation ,in order to remove or eliminate THE subsurface puch through out boron implantation peak should nbe the approximately at the source and drain of the junction
