Calculate the output resistance ro of one transistor Vtn 04

Calculate the output resistance, r_o\' of one transistor V_tn = 0.4 V, W/L = 10, k_n\' = 200 muA/V^2, lambda = 0.1 V^-1 All biases are in V r_o = 1/lambda I_D i_D = 1/2 K_n (W/L) (V_GS - V_tn)^2 (1 + lambda V_DS) An NMOS transistor has V_t0 = 0.8 V, 2 phi_f = 0.7 V, and gamma = 0.4 V^1/2. Find V_t, when V_SB = 3 V. For following 1C chips that have different working temperature ranges, Temperature ranges: Commercial, 0 to 70 C Industrial, -40 to 85 C Military, -55 to 125 C Which has the highest sales price? Why? For the 0.25-p.m process characterized by V_DD = 2.5 V, V_tn = -V_tp = 0.5 V, k_p\'= 3.5k_p\' = 110 muA/V^2, find t_PLH, t_PHL, and t_p for an inverter for which (W/L)_n = 1.5 and (W/L)_p = 3, and for C = 10 fF. Use both Consider a CMOS inverter fabricated in a 0.25-mum process for which C_ax = 6fF/mum^2, mu_n C_ox = 110 mu A/V^2, mu_p C_ox = 30 mu A/V^2, v_tn = 0.5 V, and V_DD = 2.5 V. The W/L ratio of Q_n is 0.375 mu m/0.25 mu m, and that for Q_p is 1.125 mu m/0.25 mu. The gate-source and gate-drain overlap capacitances are specified to be 0.3 fF/mu m of gate width. Further, the effective (large-signal) values of drain-body capacitances are C_dbn = 1 fF and C_dbp = 1 fF. The wiring capacitance C_w = 0.2 fF. Find t_PHL, t_PLH, and t_p when the inverter is driving an identical inverter.

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