Si 110 1350 450 108 06 P2 For the case of the Bdoped Si and

Si 1.10 1350 450 1.08 0.6 P2: For the case of the B-doped Si and other related questions (20 pts) a) In this circumstance is B a donor or acceptor in Si? b) Does B substitute for a Si atom in the Si crystal, or is it interstitial impurity? c) Is the B doped Si a p-type semiconductor or an n-type semiconductor? d) What is the principle charge carrier in this doped semiconductor, electrons or holes? Do we need to consider the contribution of both electrons and holes to the conductivity of an extrinsic semiconductor? What would be the effect of doping with P? e) below the conduction band. g) Explain how holes drift in a p-type semiconductor. h) What type of charge carriers contribute to the conductivity of an intrinsic semiconductor? Do these charge carriers have the same concentration in an intrinsic semiconductor? i) j) Do the charge carriers contribute equally to the conduction of an intrinsic semiconductor? Explain your answer.

Solution

a) B is donor with Si

b) no B cannot substitute silicon atom

c) b doped silicon is p type semiconductor

d) effect of dopind P reduce resistivity

g) drift velocity = u* E

h) p type carrier for conductivity of instric semiconductor