04 The s more heavily do oddalen reg one of a MOSFET in a mo

04. The s more heavily do oddalen reg one of a MOSFET in a modernic are one-sided junctions with the more heavily doped side being very narrow Consider such a n\'p Si step junction maintained at 300K with NA-2.25 10\" cm and No- 2.25x10 cm source and drain regions of a MOSFET in a modern IC are one-sided junctions with the o\"cm\". The Peype side is wide (\", >> L) while the n-type side is narrow or,- 50 90 nm). The minority carrier lifetime on the p-type side is 1O\"\'s The minority diffusion cocfficients are D, 12 cms, D,-2m\'s U n, = 1.5×100cm\" Assume infinite surface recombination velocities The pokdm hHe recombination velocities. 15. (a) Find the diode saturation current density, Joi Is the current in this diode dominated by injection collection of minority carrirs on the n-type side or on the p-type side? Explain why age 4 of lO

Solution

yes its correct