Epitaxial Growth 1 Describe Epitaxial Growth Film Deposition

Epitaxial Growth

1. Describe Epitaxial Growth Film Deposition processes for:

a) Silicon -

b) Compound semiconductors -

2. What should be settings to epitaxial growth silicon at the rate of 0.5 /min using vapor phase epitaxy method?

Solution

1.Epitaxial Growth Film deposition process for Silicon :

Chemical Vapor Deposition (CVD) is the deposition of a solid material onto a heated substrate through decomposition or chemical reaction of compounds contained the gas passing over the substrate. Many materials such as, silicon nitride, silicon dioxide, non-crystalline silicon, and single crystal silicon, can be deposited through CVD method.

A special method in CVD, called Epitaxy or Epitaxial Layer Deposition or Vapor-Phase Epitaxy (VPE), has only a single-crystal form as the deposited layer . This process is usually carried out for certain combinations of substrate and layer materials and under special deposition conditions.

In CVD process, a reaction chamber is introduced in which the materials to be deposited are passed through. These materials should be in the gaseous or vapor phase and react on or near the surface of the substrates, which are at some elevated temperature. This produces a chemical reaction and forms atoms or molecules that are to be deposited on entire substrate surface. A number of different materials can be deposited by the CVD process. These are listed below:

There are a number of different chemical reactions that can be used for the deposition of epitaxial layers. Four silicon sources have been used for growing epitaxial silicon. These are silicon tetrachloride [SiCl₄], dichlorosilane [SiH₂Cl₂], trichlorosilane [SiHCl₃] and silane [SiH₄].

Silicon tetrachloride has been the most studied and has seen the widest industrial use. The overall reaction can be classed as a hydrogen reduction of a gas.

SiCl_4(g) + 2H_2(g) = Si_S + 4HCl_g

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