A 5hr boron diffusion is to be performed at 1100 degree C Wh

A 5-hr boron diffusion is to be performed at 1100 degree C. What thickness of silicon dioxide is required to mask this diffusion? Repeat part (a) for phosphorus. A boron diffusion into a 1-ohm-cm n-type wafer results in a Gaussian profile with a surface concentration of 5 times 10^18/cm^3 and a junction depth of 4 mu m. (You will need to use your resistivity vs. impurity concentration figure and Irvin\'s curves to answer this question) How long did the diffusion take if the diffusion temperature was 1100 degree C? What was the sheet resistance of the layer? What is the dose in the layer?

Solution

no idea