Q7 Answer the following question Consider a silicon pn junc

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Q7

Answer the following question

Consider a silicon p-n junction with a uniform acceptor doping concentration of 1017 cm3 on pside and a consistent donor doping concentration of 1016 cm3 on the n-side. No outside voltage is applied to the diode. Given: kT/q = 26 mV,

ni =1.5 ×1010cm3 , Si = 120, 0 = 8.85 × 1014 F/m,

and q = 1.6 ×1019 C.

The charge per the unit junction area (nC cm2) in the depletion region on the p-side is explanation not needed I want just answer of this.

Thank you

Solution

Answer:

silicon p-n junction with a uniform acceptor doping concentration of 1017 cm3

Given: kT/q = 26 mV

ni =1.5 ×1010 cm3

Si = 120

0 = 8.85 × 1014 F/m

q = 1.6 ×1019 C

Then

The depletion region on the p-side is -5.0 : -4.6