You are designing a piezoelectric bimorph actuator with the

You are designing a piezoelectric bimorph actuator with the following constraints. The width of the laminate cantilever is 200 ?m with 50 ?m of PZT (E = 61 GPa, d13 = 320*10-12 C/N) on top and 10 ?m of silicon (E = 160 GPa) on the bottom. The PZT is poled so that the 1 direction points along the length of the cantilever and the 3 direction points up through the thickness – applying E3 = 100 V bends the cantilever downward. Assume a top electrode is thin enough to be ignored and the silicon provides the bottom electrode for the PZT.

(a) Considering just the PZT layer (ignoring the silicon layer for now), what is the free strain in the 1 direction (?1) with V3 = 100V?

(b) Now considering the full bimorph, what length does the cantilever need to be to achieve a displacement of 100 ?m?

(c) What kind of amplification is this over what the PZT could achieve on its own (part a)?

(d) What is the blocked force for the bimorph actuator?

You are designing a piezoelectric bimorph actuator with the following constraints. The width of the laminate cantilever is 200 um with 50 um of PZT (E 61 GPa, d13 320*10 12 c/N) on top and 10 um of silicon (E 160 GPa) on the bottom. The PZT is poled so that the 1 direction points along the length of the cantilever and the 3 direction points up through the thickness- applying E3 100 V bends the cantilever downward. Assume a top electrode is thin enough to be ignored and the silicon provides the bottom electrode for the PZT. 3. PZT Silicon Considering just the PZT layer (ignoring the silicon layer for now), what is the free strain in the 1 direction (e with V100V? Now considering the full bimorph, what length does the cantilever need to be to achieve a displacement of 100 m? What kind of amplification is this over what the PZT could achieve on its own (part a)? What is the blocked force for the bimorph actuator? a. b. c. d.

Solution

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