Please makre sure to answer all parts Assume you are designi

Please makre sure to answer all parts

Assume you are designing a low-speed circuit to monitor temperature in a remote area and it is powered by a small battery. Explain which parameters you are considering if cost is not an issue for Implementation technology (90nm, 65nm, or 45nm)? Why? Device with high threshold voltage (V_TH = 0.4V) or low-threshold voltage (V_TH = 0.1V)? Why? High V_DD (1.2V) or low V_DD (0.6V)? Why? Biasing the substrate (body) or no biasing (V_SB = 0)? Why?

Solution

45nm, lowest threshold voltage 0.1v, high drain voltage and no biasing voltage