What are the main sources of leakage in MOSFETSolutionThe le
Solution
The leakages in MOSFET are:
Subthershold leakage: It is the current between source & drain of a MOSFET, when the transistor is in subthreshold region(when gate sourcce voltages are below threshold voltages).
Junction leakage:Junction leakage results due to the minority carrier current & also drift current , electron hole pair at the depletion region.
When both n regions and p regions are heavily doped, as is the case for some advanced MOSFETs, there will also be junction leakage due electron tunneling from valence band of the p-side to the conduction band of the n-side.
Gate induced leakage current (GIDL):Gate-induced drain leakage (GIDL) is caused by high field effect in the drain junction of MOS transistors.
Gate oxide tunneling:When there is a high electric field across a thin gate oxide layer gate oxide tunneling of electrons can result in leakage. Electrons may tunnel into the conduction band of the oxide layer; this is called Fowler-Nordheim tunneling.

