Consider a silicon pn junction with a uniform acceptor dopi

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Consider a silicon p-n junction with a uniform acceptor doping concentration of 1017 cm-3 on pside and a consistent donor doping concentration of 1016 cm-3 on the n-side. No outside voltage is applied to the diode. Given: kT/q = 26 mV, ni = 1.5 times 1010cm-3, epsilon Si = 12 epsilon 0, epsilon 0 = 8.85 times 10-14 F/m, and q= 1.6 times 10-19 C. The charge per the unit junction area (nC cm-2) in the depletion region on the p-side is explanation not needed I want just answer of this.

Solution

Answer:

silicon p-n junction with a uniform acceptor doping concentration of 1017 cm3

Given: kT/q = 26 mV

ni =1.5 ×1010 cm3

Si = 120      

0 = 8.85 × 1014 F/m

q = 1.6 ×1019 C

Then

The depletion region on the p-side is -5.0 : -4.6