QUESTION 4 10 points What is the advantage of making the bas

QUESTION 4 10 points What is the advantage of making the base more heavily doped than the colector? 1. The collector has to have less doping than the base in order to have a more heavily doped base. 2 Heavy doping of the base allows it to dominate the collector. 3.Alighter doped collector minimi the change in base width when the revorse bias on the colector base iuretion increases. 4. Light doping of the collector allows it to have a higher resistance QUESTION 5 Can the undepleted portion of the base be reduced to zero? 1.As long as there is a 2.It is not recommended since if the 3. the base-collector junction is sufficiently 4. If the entire base is base its width is base is completely depleted the reverse biased the undepleted portion of the always non-zerol transistor wil be destroyod. base can be reduced to zero, a condition called undepleted portion will QUESTION 6 15 points Save Answer Is there any electrical advantage to having a narrow base? 1.A narrow base means carriers can 2.A narrow base increases the base 3.A narrow base 4.A narrow base allows more transport factor which increases the offers no electrical transistors to be packed on quickly cross the base which can lead transistor\'s current gain in the active to undesirable high frequency to a chip per unit area. 15 points Save Answer QUESTION 7 Why do we call NPN and PNP transistors \"BIPOLAR\" junction transistors? 4, MOSFETs were created first and 2, Transistor is caled 3 Transistor is called BlPOLAR BIPOLAR since it requires since it has several modes of using both n-type and peration, like a person with a semiconductor BIPOLAR diagnosis can have 1.The current voltage were referred to as \"UNIPOLAR characteristics of the devices. Since BJTs were created transistor depends on the after MOSFETS they were referred to behavior of both negative as \"BIPOLAR\" to avoid any electrons and positive holes.

Solution

Question 4) Answer------3

A lighter doped collector minimises the changes in base width when reverse bias of collector base junction increases