Plasma etching is essential to the fineline pattern transfer

Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on chlorine flow (x, in SCCM) through a nozzle used in the etching mechanism and etch rate (y, in 100 A/min).

The summary statistics are

(a) Does the simple linear regression model specify a useful relationship between chlorine flow and etch rate? (Use = 0.05.)
State the appropriate null and alternative hypotheses.

H0: 1 = 0
Ha: 1 < 0H0: 1 0
Ha: 1 = 0    H0: 1 = 0
Ha: 1 0H0: 1 = 0
Ha: 1 > 0


Calculate the test statistic and determine the P-value. (Round your test statistic to two decimal places and your P-value to three decimal places.)



State the conclusion in the problem context.

Reject H0. This model does not specify a useful relationship between chlorine flow and etch rate.

Fail to reject H0. This model does not specify a useful relationship between chlorine flow and etch rate.    

Fail to reject H0. This model does specify a useful relationship between chlorine flow and etch rate.

Reject H0. This model does specify a useful relationship between chlorine flow and etch rate.


(b) Estimate the true average change in etch rate associated with a 1-SCCM increase in flow rate using a 95% confidence interval. (Round your answers to three decimal places.)



(c) Calculate a 95% CI for Y · 3.0,

the true average etch rate when flow = 3.0. (Round your answers to three decimal places.)


(d) Calculate a 95% PI for a single future observation on etch rate to be made when flow = 3.0. (Round your answers to three decimal places.)


(e) Would the 95% CI and PI when flow = 2.5 be wider or narrower than the corresponding intervals of parts (c) and (d)? Answer without actually computing the intervals.

x 1.5 1.5 2.0 2.5 2.5 3.0 3.5 3.5 4.0
y 24.0 24.5 25.5 30.0 33.5 39.5 40.5 46.0 49.5

Solution

a) the appropriate null and alternative hypotheses.is

Ha: 1 0H0: 1 = 0

t-value = 11.33

P-value = 0.000

conclusion: Reject H0. This model does specify a useful relationship between chlorine flow and etch rate.

b)

The 95% CI for Y · 3.0, is (36.253,40.183)

c) Predicted value = 7.2564+(10.3205*3)= 38.2179

A 95% PI for a single future observation on etch rate to be made when flow = 3.0 is (32.388, 44.048)

d)

The predicted value at x=2.5 is 7.2564+(10.3205*2.5)= 33.0577

the 95% CI and PI when flow = 2.5 be narrower than the corresponding intervals of parts (c) and (d)

Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on
Plasma etching is essential to the fine-line pattern transfer in current semiconductor processes. An article gives the accompanying data (read from a graph) on

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