Please help me with this simulationPlease help me step by st

Please help me with this simulation?Please help me step by step, I just learning this project

Solution

We can see that for the n-channel MOSFET (NMOS) above the substrate semiconductor material is p-type, while the source and drain electrodes are n-type. The supply voltage will be positive. Biasing the gate terminal positive attracts electrons within the p-type semiconductor substrate under the gate region towards it.

This over abundance of free electrons within the p-type substrate causes a conductive channel to appear or grow as the electrical properties of the p-type region invert, effectively changing the p-type substrate into a n-type material allowing channel current to flow.

The reverse is also true for the p-channel MOSFET (PMOS), where a negative gate potential causes a build of holes under the gate region as they are attracted to the electrons on the outer side of the metal gate electrode. The result is that the n-type substrate creates a p-type conductive channel.

So for our n-type MOS transistor, the more positive potential we put on the gate the greater the build-up of electrons around the gate region and the wider the conductive channel becomes. This enhances the electron flow through the channel allowing more channel current to flow from drain to source leading to the name of Enhancement